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Specifications Periodische Vorwärts- und Rückwärts-Spitzensperrspannungrepetitive peak forward off-state and reverse voltages Tvj = -40°C... Tvj max VDRM,VRRM 2000240022002600 V Vorwärts-Stoßspitzensperrspannungnon-repetitive peak forward off-state voltage Tvj =...

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TZ400N: Specifications Periodische Vorwärts- und Rückwärts-Spitzensperrspannungrepetitive peak forward off-state and reverse voltages Tvj = -40°C... Tvj max VDRM,VRRM 2000240022002600 V...

TZ400N Data Sheet

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Part Number:: TZ400N
Supply Ability:: 5000

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Upload time: 2024/4/26

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TZ400N20KOF evaluate
US $118.32 - 131.47 / Piece

Discrete Semiconductor Modules 2000V 1050A SINGLE
TZ400N22KOF evaluate
US $110.88 - 122.76 / Piece

Discrete Semiconductor Modules 2200V 1050A SINGLE
TZ400N24KOF evaluate
US $130.07 - 144.52 / Piece

Discrete Semiconductor Modules 2400V 1050A SINGLE

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Specifications

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages	T_vj= -40°C... T_{vj max}	V_DRM,V_RRM	2000 2400 2200 2600	V
Vorwärts-Stoßspitzensperrspannung non-repetitive peak forward off-state voltage	T_vj= -40°C... T_{vj max}	V_DSM	2000 2400 2200 2600	V
Rückwärts-Stoßspitzensperrspannung non-repetitive peak reverse voltage	T_vj= +25°C... T_{vj max}	V_RSM	2100 2500 2300 2700	V
Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current		I_TRMSM	1050	V
Dauergrenzstrom average on-state current	T_C = 85°C T_C= 46°C	I_TAVM	400 670	V
Stoßstrom-Grenzwert surge current	T_vj= 25 °C, t_P = 10 ms T_vj= T_vj _max, t_P = 10 ms	I_TSM	13000 11000	V
Grenzlastintegral I²t-value	T_vj= 25 °C, t_P = 10 ms T_vj= T_{vj max}, t_P = 10 ms	I²t	845000 605000	A²s A²s
Kritische Stromsteilheit critical rate of rise of on-state current	DIN IEC 747-6 f = 50 H_z, _iGM= 1 A, d_iG/dt= 1 A/s	(diT/dt)_cr	150	A/s
Kritische Spannungssteilheit critical rate of rise of off-state voltage	T_vj = T_{vj max,} v_D = 0,67 V_DRM 6.Kennbuchstabe / 6^th letter F	(dvD/dt)_cr	1000	V/s

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TZ400N

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