U1009-BD

Features: ·Sub-harmonic Transmitter·Integrated Mixer, LO Doubler/Buffer & Output Amplifier·+25.0 dBm Output Third Order Intercept (OIP3)·35.0 dB Gain Control·2.0 dBm LO Drive Level·9.0 dB Conversion Gain·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifica...

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SeekIC No. : 004534538 Detail

U1009-BD: Features: ·Sub-harmonic Transmitter·Integrated Mixer, LO Doubler/Buffer & Output Amplifier·+25.0 dBm Output Third Order Intercept (OIP3)·35.0 dB Gain Control·2.0 dBm LO Drive Level·9.0 dB Conver...

floor Price/Ceiling Price

Part Number:
U1009-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/8

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Product Details

Description



Features:

·Sub-harmonic Transmitter
·Integrated Mixer, LO Doubler/Buffer & Output Amplifier
·+25.0 dBm Output Third Order Intercept (OIP3)
·35.0 dB Gain Control
·2.0 dBm LO Drive Level
·9.0 dB Conversion Gain
·100% On-Wafer RF and DC Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vcc) +6.0 VDC
Supply Current (Id1,2,3) 320,190,110 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (IF Pin) +0.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table 3
Junction Temperature (Tch) MTTF Table 3


(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0 dBm output third order intercept across the band. This U1009-BD device is a balanced resistive pHEMT mixer followed by a distributed amplifier and includes an integrated LO doubler and LO buffer amplifier. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. IF and IF mixer inputs are provided through an external 180 degree hybrid. This U1009-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1009-BD device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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