U(B)30DCT Selling Leads, Price trend, U(B)30DCT DataSheet download, circuit diagram from SeekIC.com

Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder d...

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SeekIC No. : 004534458 Detail

U(B)30DCT: Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capabilityR...

U(B)30DCT Data Sheet

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Part Number:: U(B)30DCT
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/5/16

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U(B)30BCT evaluate
Features: • Oxide planar chip junction• Ultrafast recovery time• Soft recovery c...

Product Details

Description

Features:

• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection specifically for CCM application

Specifications

PARAMETER	SYMBOL	U(B)30BCT	U(B)30CCT	U(B)30DCT	UNIT
Maximum repetitive peak reverse voltage	V_RRM	100	150	200	V
Maximum average forward rectified total device current (Fig. 1) per diode	I_F(AV)	30 15			A
Peak forward surge current single half sine-wave8.3 ms superimposed on rated load per diode10 ms	I_FSM	160 150			A
Electrostatic discharge capacitor voltage, human body model: C = 150 pF, R = 1.5 k (contact mode)	V_C	8			V
Operating junction and storage temperature range	T_J, T_STG	- 55 to + 150

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U(B)30DCT

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