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UF630

Features: `9A, 200V, Low RDS(ON)(0.4)`Single Pulse Avalanche Energy Rated`Rugged - SOA is Power Dissipation Limited`Fast Switching Speeds`Linear Transfer Characteristics`High Input ImpedanceSpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ =25~125) VDS 200 V ...

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UF630: Features: `9A, 200V, Low RDS(ON)(0.4)`Single Pulse Avalanche Energy Rated`Rugged - SOA is Power Dissipation Limited`Fast Switching Speeds`Linear Transfer Characteristics`High Input ImpedanceSpecific...

UF630 Data Sheet

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Part Number:
UF630
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

`9A, 200V, Low RDS(ON)(0.4)
`Single Pulse Avalanche Energy Rated
`Rugged - SOA is Power Dissipation Limited
`Fast Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance


Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage (TJ =25~125) VDS 200 V
Drain to Gate Voltage (RGS = 20k, TJ =25~125) VDGR 200 V
Gate to Source Voltage VGS ±20 V
Drain Current Continuous ID 9 A
Ta = 100 6 A
Pulsed 36 A
Maximum Power Dissipation (Ta = 25)
Derating above 25		 PD 75
0.6		 W
W/``􀄊
Single Pulse Avalanche Energy Rating
(VDD=20V, starting TJ =25, L=3.37mH, RG=50, peak IAS = 9A)		 EAS 150 mJ
Operation and Storage Temperature TJ, TSTG -40 ~ +150 ``

Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.




Description

The N-Channel enhancement mode silicon gate power MOSFET UF630 is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.




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