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PDF/DataSheet Download
Datasheet: UGF8HT
File Size: 138957 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
|
SYMBOLS |
UGF8HT |
UGF8JT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
500 |
600 |
Volts |
| Working peak reverse voltage |
VRWM |
400 |
480 |
Volts |
| Maximum RMS voltage |
VRMS |
350 |
420 |
Volts |
| Maximum DC blocking voltage |
VDC |
500 |
600 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
| Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C TJ=125°C |
VF |
1.75 1.50 |
Volts | |
| Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C TC=125°C |
IR |
30.0 800.0 4.0 |
mA mA mA | |
| Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
25 |
ns | |
| Reverse recovery time at Maximum IF=1.0A, di/dt=50A/ms, VR=30V, Irr=0.1 IRM Typical |
trr |
50 35 |
ns | |
| Typical softness factor (tb/ta) IF=8.0A, di/dt=240A/ms, VR=400V Irr=0.1 IRM |
S |
1.0 |
- | |
| Maximum reverse recovery current at IF=8.0A, di/dt=64A/ms,VR=400V TC=125°C |
IRM |
5.5 |
Amps | |
| Typical reverse recovery current at IF=8.0A, di/dt=240A/ms, VR=400V TC=125°C |
IRM |
10.0 |
Amps | |
| Peak forward recovery time at Maximum IF=8A, di/dt=64A/ms measured at 1.1 VF Typical |
tfr |
500 250 |
ns | |
| Typical thermal resistance from junction to case |
RθJC |
5.0 |
°C/W | |
| Operating junction and storage temperature range |
TJ, TSTG |
-55 to+150 |
°C | |
