Features: 1) Two 2SK3018 transistors in a single UMT package.2) The MOSFET elements are independent, eliminating interference.3) Mounting cost and area can be cut in half.4) Low on-resistance.5) Low voltage drive (2.5V) makes this device ideal for portable equipment.ApplicationInterfacing, switchi...
UM6K1N: Features: 1) Two 2SK3018 transistors in a single UMT package.2) The MOSFET elements are independent, eliminating interference.3) Mounting cost and area can be cut in half.4) Low on-resistance.5) Low...
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|
Parameter |
Symbol |
Value |
Unit | |
|
Drain-source voltage |
VCE |
30 |
V | |
|
Drain-source |
Continues |
IC |
100 |
mA
|
| pulsed | ||||
|
Revserse Drain current |
Continues |
I Cpul s |
200 | |
| pulsed | ||||
|
- |
100
| |||
|
Gate-emitter voltage |
VGE |
200 |
mA | |
|
Gate-source voltage |
EAS |
±20 |
V | |
|
Total power dissipaton(Tc=25) |
tSC |
150 |
MW | |
|
Power dissipationTC = 25°C |
P t o t |
150 |
°C | |
|
Storage templeteture |
Tstg |
-55...+150 |
°C | |