UMC1N

The UMC1N is designed as one kind of power management (dual digital transistors) that has three points of features:(1)both the DTA143T chip and DTC143T chip in a UMT or SMT package; (2)ideal for power switching circuits; (3)mounting cost and area can be cut in half. And the structure of this device is epitaxial planar type NPN/ PNP silicon transistor (built-in resistor type).

The absolute maximum ratings of the UMC1N can be summarized as:(1)supply voltage:50 V;(2)input voltage:50 V;(3)collector current:10 mA;(4)junction temperature:150;(5)storage temperature:-55 to +150;(6)power dissipation (UMC4N):150 mW;(7)power dissipation (FMC4A):300 mW. And the electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: 50 V;(2)collector-emitter breakdown voltage: 50 V;(3)emitter-base breakdown voltage:5 V;(4)collector cutoff current:0.5 uA;(5)emitter cutoff current:0.5 uA;(6)collector-emitter saturation voltage:0.3 V;(7)DC current transfer ratio:100 to 600.

If you want to know more information such as the electrical characteristics about the UMC1N, please download the datasheet in www.seekic.com or www.chinaicmart.com.