DescriptionThe UPA1980 is a switching device,which can be driven directly by a 1.8 V power source.This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics,and a low leakage schottky barrier diode, and is suitable for applications such as ...
UPA1980: DescriptionThe UPA1980 is a switching device,which can be driven directly by a 1.8 V power source.This device incorporates a MOS FET, which features a low on-state resistance and excellent switching...
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The UPA1980 is a switching device,which can be driven directly by a 1.8 V power source.This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics,and a low leakage schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on.
Features of the UPA1980 are:(1)1.8 V drive available (MOS FET);(2)low on-state resistance (MOS FET) RDS(on)1=135m MAX. (VGS=−4.5V,ID=−1.0A),RDS(on)2=183m MAX. (VGS=−2.5V,ID=−1.0A),RDS(on)3=284m MAX. (VGS=−1.8V,ID=−0.5A);(3)low reverse current (schottky barrier diode) IR=20A MAX.(VR=40V).
The absolute maximum ratings of the UPA1980 can be summarized as:(1):the parameter is drain to source voltage(VGS=0V),the symbol is VDSS,the rating is -20.0,the unit is V;(2):the parameter is gate to source voltage(VDS=0V),the symbol is VGSS,the rating is ±8.0,the unit is V;(3):the parameter is drain current (DC) (TA=25),the symbol is ID(DC),the rating is ±2.0,the unit is A;(4):the parameter is drain current (pulse),the symbol is ID(pulse),the rating is ±8.0,the unit is A;(5):the parameter is total power dissipation,the symbol is PT,the rating is 0.57,the unit is W;(6):the parameter is channel temperature range,the symbol is Tch,the rating is 150,the unit is ;(7):the parameter is storage temperature range,the symbol is Tcstg,the rating is -55 to +125,the unit is .