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UPA827TF

Features: • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz• 6-pin thin-type small mini mold package• Built-in 2 transistors (2 u 2SC5179)PinoutSpecifications PARAMETERS S...

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UPA827TF: Features: • High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz• 6-pin thin-type small mini...

UPA827TF Data Sheet

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Part Number:
UPA827TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Description



Features:

• High gain with low operating current |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin thin-type small mini mold package
• Built-in 2 transistors (2 u 2SC5179)


Pinout

Connection Diagram


Specifications

          PARAMETERS

SYMBOLS

RATING

 UNIT

Collector to Base Voltage

VCBO

5

 V

Collector to Emitter Voltage

VCEO

3

 V

Emitter to Base Voltage

VEBO

2

 V

Collector Current

IC

10

 mA

Total Power Dissipation

 PT

30 in 1 element
60 in 2 elements

 mW
Junction Temperature  TJ 150  
Storage Temperature  TSTG -65 to +150  



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