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UPA901TU

Features: • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz• LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz• SINGLE POWER SUPPLY OPERATION: VCE = 3.6 V• BUILT-IN BIAS CIRCUIT• 8-PIN LEAD-LESS MINIMOLD: (2.0 × 2.2 × 0.5 ...

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SeekIC No. : 004537919 Detail

UPA901TU: Features: • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz• LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz• SINGLE POWER SUPPLY OP...

UPA901TU Data Sheet

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Part Number:
UPA901TU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
• LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
• SINGLE POWER SUPPLY OPERATION: VCE = 3.6 V
• BUILT-IN BIAS CIRCUIT
• 8-PIN LEAD-LESS MINIMOLD: (2.0 × 2.2 × 0.5 mm)


Application

• 5.8 GHz Cordless Phones
• 5.8 GHz Band DSRC (Dedicated Short Range Communication) System
• 5 GHz Band Video Transmitter


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
4.5
V
Emitter-base voltage
VEBO
2
V
Collector Current of Q1
IC1
75
mA
Collector Current of Q2
IC2
250
mA
Bias Current
IBIAS
25
mA
Total Power Dissipation
Ptot Note
410
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 to +150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)


Description

NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other
5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption.

NEC's UPA901TU is packaged in surface mount 8-pin leadless minimold plastic package.

This device UPA901TU is fabricated with our SiGe HBT process UHS2- HV technology.




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