UPC1663GV-E1

The UPC1663GV-E1 is a differential input, differential output wideband amplifier IC that uses an high frequency silicon bipolar process.This process improves bandwidth phase characteristics,input noise voltage characteristics,and low power consumption when compared to conventional HF-band differential amplifier ICs.This process uses silicon nitride passivation film and gold electrodes.These materials can protect chip surface from external pollution and prevent corrosion/migration.Thus,these ICs have excellent performance,uniformity and reliability.

Features of the UPC1663GV-E1 are:(1)bandwidth and typical gain:120 MHz @ AVOL =300,700 MHz @ AVOL=10;(2)phase delay:85 deg.@ AVOL=100,100MHz;(3)input noise voltage:3 mVr.m.s.(RS=50,10k to 10MHz);(4)supply current:13mA TYP.@ VCC±=±6 V;(5)gain adjustable from 10 to 300 with external resistor;(6)no frequency compensation required(small phase delay at 10 MHz or less).

The absolute maximum ratings of the UPC1663GV-E1 can be summarized as:(1):the parameter is supply voltage,the symbol is VCC,the rating is ±7,the unit is V;(2):the parameter is power dissipation,the symbol is PD,the rating is 280(TA=+75),the unit is mW;(3):the parameter is differential input voltage,the symbol is VID,the rating is ±5,the unit is V;(4):the parameter is  input voltage,the symbol is VICM,the rating is ±6(within VCC- to VCC+ range),the unit is V;(5):the parameter is  output current,the symbol is Io,the rating is 35,the unit is mA;(6):the operating ambient temperature,the symbol is TA,the rating is -45 to +75,the unit is ;(7):the storage temperature,the symbol is Tstg,the rating is -55 to +150,the unit is .