DescriptionThe UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very low-power device that requires no clock or refreshing to operate.The UPD4464G-12L is available in st...
UPD4464G-12L: DescriptionThe UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very ...
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DescriptionThe UPD42S16800L is designed as 2097152 wirds by 8 bits dynamic CMOS RAM with refresh c...
Features: • 131,072 words by 8 bits organization• Fast access time: 70, 85, 100, 120, ...
DescriptionThe UPD4364CX-10 is one member of the UPD4364 family which is designed as the 8192 x 8-...
The UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very low-power device that requires no clock or refreshing to operate.The UPD4464G-12L is available in standard 28-pin plastic DIP or miniflat packaging.
The absolute maximum ratings of the UPD4464G-12L can be summarized as:(1):the parameter is power supply voltage,the symbol is Vcc,the rating is -0.5 to +7.0,the unit is V;(2):the parameter is input voltage,the symbol is VIN,the rating is -0.5 to Vcc+0.5,the unit is V;(3):the parameter is output voltage,the symbol is VOUT,the rating is -0.5 to Vcc+0.5,the unit is V;(4):the parameter is operating temperature,the symbol is Topr,the rating is -40 to +85,the unit is ;(5):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +125,the unit is ;(6):the parameter is power dissipation,the symbol is Pd,the rating is 1.0,the unit is W.