UPD4464G-12L

DescriptionThe UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very low-power device that requires no clock or refreshing to operate.The UPD4464G-12L is available in st...

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SeekIC No. : 004538159 Detail

UPD4464G-12L: DescriptionThe UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very ...

floor Price/Ceiling Price

Part Number:
UPD4464G-12L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/12

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Product Details

Description



Description

The UPD4464G-12L is a high-speed 8,192-word by 8-bit static RAM fabricated with advanced silicon-gate technology.Full CMOS storage cells with six transistors make the UPD4464G-12L a very low-power device that requires no clock or refreshing to operate.The UPD4464G-12L is available in standard 28-pin plastic DIP or miniflat packaging.
 
The absolute maximum ratings of the UPD4464G-12L can be summarized as:(1):the parameter is power supply voltage,the symbol is Vcc,the rating is -0.5 to +7.0,the unit is V;(2):the parameter is input voltage,the symbol is VIN,the rating is  -0.5 to Vcc+0.5,the unit is V;(3):the parameter is output voltage,the symbol is VOUT,the rating is -0.5 to Vcc+0.5,the unit is V;(4):the parameter is operating temperature,the symbol is Topr,the rating is -40 to +85,the unit is ;(5):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +125,the unit is ;(6):the parameter is power dissipation,the symbol is Pd,the rating is 1.0,the unit is W. 




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