UPD46128953F1-EB1

The UPD46128953F1-EB1 is a high speed, low power, 134,217,728 bits (4,194,304 words by 32 bits) CMOS mobile specified RAM featuring synchronous burst read and synchronous burst write function.The UPD46128953F1-EB1 realizes high performance with the SDR interface, command and data inputs/outputs are synchronized the rising edge of clock.The UPD46128953F1-EB1 is fabricated with advanced CMOS technology using one-transistor memory cell.

Features of the UPD46128953F1-EB1 are:(1)4,194,304 words by 32 bits organization;(2)low voltage operation: 1.7 to 2.0 V (1.85±0.15V);(3)operating ambient temperature:TA=−25 to +85 ;(4)synchronous burst mode;(5)SDR (single data rate) architecture;(6)write data mask (DM) for write operation;(7)output enable:/OE pin;(8)chip enable input:/CE1 pin;(9)standby mode input:CE2 pin;(10)standby mode 1:normal standby (memory cell data hold valid);(11)standby mode 2:density of memory cell data hold is variable.
 
The absolute maximum ratings of the UPD46128953F1-EB1 can be summarized as:(1):the parameter is supply voltage,the symbol is VDD,the rating is -0.5 to +2.5,the unit is V;(2):the parameter is input/output supply voltage,the symbol is VDD,the rating is -0.5 to +2.5,the unit is V;(3):the parameter is input/output voltage,the symbol is VT,the rating is -0.5 to +2.5,the unit is V;(4):the parameter is operating ambient temperature,the symbol is TA,the rating is -25 to +85,the unit is ;(5):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +125,the unit is .