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UPF1N100

Features: • Rugged POWERMITE 3® Surface Mount Package• Low On-State Resistance• Avalanche and Surge Rated• High Frequency Switching• Ultra Low Leakage current• UIS rated• Available with Lot Acceptance TestingSpecificationsPARAMETER SYMBOL VALUE UNITDra...

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UPF1N100: Features: • Rugged POWERMITE 3® Surface Mount Package• Low On-State Resistance• Avalanche and Surge Rated• High Frequency Switching• Ultra Low Leakage current•...

UPF1N100 Data Sheet

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Part Number:
UPF1N100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Rugged POWERMITE 3® Surface Mount Package
• Low On-State Resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra Low Leakage current
• UIS rated
• Available with Lot Acceptance Testing


Specifications

PARAMETER                                                             SYMBOL      VALUE      UNIT
Drain-to-Source Voltage                                          VDSS          1000         Volts
Gate- to -Source Voltage                                         VGS            +/- 20       Volts
Continuous Drain Current @ TC = 25°C                 ID1            1.0             Amps
Continuous Drain Current @ TC=100°C                 ID2             0.27         Amps
Avalanche Current                                                   IAR            1.0            Amps
Repetitive Avalanche Energy                                   EAR            3.5            mJ
Single Pulse Avalanche Energy                                EAS           120            mJ
Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125 °C
Steady-state Thermal Resistance, Junction-to-Tab RJ-TAB      2.5          °C/Watt


Description

This device UPF1N100 is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package.




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