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UPG110B

Features: • WIDE-BAND: 2 to 8 GHz• HIGH GAIN: 15 dB at f = 2 to 8 GHz• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 W• HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITYSpecifications SYMBOLS PARAMETERS UNITS RATINGS ...

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SeekIC No. : 004538345 Detail

UPG110B: Features: • WIDE-BAND: 2 to 8 GHz• HIGH GAIN: 15 dB at f = 2 to 8 GHz• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 W• HERMETICALLY...

UPG110B Data Sheet

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Part Number:
UPG110B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• WIDE-BAND: 2 to 8 GHz
• HIGH GAIN: 15 dB at f = 2 to 8 GHz
• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 W
• HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDD Drain Voltage V +10
VIN Input Voltage V -5 to +0.6
PIN Input Voltage dBm +10
PT Total Power Dissipation W 1.5
TC Case Temperature °C -65 to +125
TSTG Storage Temperature °C -65 to +175
Note:
1. Operation in excess of any one of these parameters may result in permanent damage


Description

The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz.

The device UPG110B is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form.




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