MOSFET 2P-CH 20V 1A
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V |
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | +/- 1 A |
Resistance Drain-Source RDS (on) : | 0.57 Ohms | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | TUMT-6 |
Packaging : | Reel |
Technical/Catalog Information | US6J2TR |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1A |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
Input Capacitance (Ciss) @ Vds | 150pF @ 10V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 2.1nC @ 4.5V |
Package / Case | TUMT6 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | US6J2TR US6J2TR |