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Features: · A collector current is large.· VCE(sat) : max. 370mV At lc=1.5A / lB=75mAApplication·Low frequency amplifier·DriverSpecifications Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 ...

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SeekIC No. : 004538713 Detail

US6X4: Features: · A collector current is large.· VCE(sat) : max. 370mV At lc=1.5A / lB=75mAApplication·Low frequency amplifier·DriverSpecifications Parameter Symbol Limits Unit ...

US6X4 Data Sheet

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Part Number:: US6X4
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/5/12

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US6X3 evaluate
Features: · A collector current is large.· VCE(sat) : max. 250mV At lc=1.5A / lB=30mAApplication·L...
US6X3TR evaluate
Transistors Bipolar (BJT) BIPOLAR NPN
US6X4TR evaluate
US $.09 - .09 / Piece

Transistors Bipolar (BJT) BIPOLAR NPN

Product Details

Description

Features:

· A collector current is large.
· V_CE(sat) : max. 370mV At lc=1.5A / l_B=75mA

Application

·Low frequency amplifier
·Driver

Specifications

Parameter	Symbol	Limits	Unit
Collector-base voltage	V_CBO	30	V
Collector-emitter voltage	V_CEO	30	V
Emitter-base voltage	V_EBO	6	V
Collector current	I_C	2	A
	I_CP	4	A∗1
Power dissipation	P_c	400 1.0	mW∗2 W∗3
Junction temperature	T_j	150	°C
Range of storage temperature	T_stg	-55 to +150	°C

∗1 Single pulse, Pw=1ms.
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate.

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US6X4

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