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USB10P

Features: ·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.·Low gate charge (13nC typical).·High performance trench technology for extremely low RDS(ON).·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)Specifications ...

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SeekIC No. : 004538755 Detail

USB10P: Features: ·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.·Low gate charge (13nC typical).·High performance trench technology for extremely low RDS(ON).·SuperSOTTM-...

USB10P Data Sheet

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Part Number:
USB10P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.
·Low gate charge (13nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)


Specifications

Symbol
 Parameter
Ratings
Units
VDSS
 Drain-Source Voltage
-20
V
VGSS
 Gate-Source Voltage-Continuous
±8
V
ID
 Drain Current - Continuous (Note 1a)
- Pulsed
-4.5
-20
A
PD
 Power Dissipation for Single Operation (Note 1a)
(Note 1b)
1.6
0.8
W
TJ, Tstg
 Operating and Storage Junction Temperature Range
-55 to +150
°C
RJA
 Thermal Resistance, Junction-to-Ambient (Note 1a)
78
°C/W
RJC
 Thermal Resistance, Junction-to-Case (Note 1)
30
°C/W



Description

This P -Channel 2.5V specified MOSFET of the USB10P is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices of the USB10P are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.




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