PinoutSpecifications PARAMETER SYMBOL RATING UNITS Drain-Source Voltage) VDSS - 20 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (Note 3) Ta=25 ID -2.6 A Ta=70 -2.1 A Pulsed Drain Current (Note 1, 2) IDM -10 W Total Power Dissipation (Ta=25) P...
UT2327: PinoutSpecifications PARAMETER SYMBOL RATING UNITS Drain-Source Voltage) VDSS - 20 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (Note 3) Ta=25 ID -2.6 A T...
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| PARAMETER | SYMBOL | RATING | UNITS | |
| Drain-Source Voltage) | VDSS | - 20 | V | |
| Gate-Source Voltage | VGSS | ± 12 | V | |
| Continuous Drain Current (Note 3) | Ta=25 | ID | -2.6 | A |
| Ta=70 | -2.1 | A | ||
| Pulsed Drain Current (Note 1, 2) | IDM | -10 | W | |
| Total Power Dissipation (Ta=25) | PD | 1.38 | W | |
| Junction Temperature | TJ | +150 | ||
| Storage Temperature | Tstg | -55 ~ +150 | ||
The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters