Features: SpecificationsDescriptionThe UT7156 series is designed as one kind of high performance, asynchronous, radiation-hardened,32Kx8 random access memory conforming to industry-standard fit,form and function.The UT7156 SRAM features fully static operation requiring no external clocks or timing...
UT7156 series: Features: SpecificationsDescriptionThe UT7156 series is designed as one kind of high performance, asynchronous, radiation-hardened,32Kx8 random access memory conforming to industry-standard fit,form...
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The UT7156 series is designed as one kind of high performance, asynchronous, radiation-hardened,32Kx8 random access memory conforming to industry-standard fit,form and function.The UT7156 SRAM features fully static operation requiring no external clocks or timing strobes.Implemented using an advanced radition-hardened process and a device enable/disable function the UT7156 is a high performance,power-saving SRAM.The combination of radition-hardness, fast access time,and low power consumption make UT7156 ideal for high-speed systems designed for operation in radiation environments.
Features of the UT7156 series can be summarized as:(1)40 ns,55 ns and 70 ns maximum address time;(2)asynchronous operation for compatibility with industry-standard 32K x 8 SRAM;(3)CMOS compatible inputs/outputs;(4)three-state bidirectional data bus;(5)low operating and standby current;(6)QML Q and V compliant part;(7)5-volt operation;(8)standard microciruit drawing available 5962-92153.
The absolute maximum ratings of the UT7156 series are:(1)DC supply voltage:-0.5 to 7.0 V;(2)voltage on any pin:-0.5 to Vdd+0.3 V;(3)storage temperature:-65 to 150;(4)maximum power dissipation:2.0 W;(5)maximum junction temperature:+150;(6)thermal resistance,junction-to-case:10/W;(7)DC input current:+/- 10 mA.