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UTCUT136E

Specifications PARAMETER SYMBOL RATING UNIT Repetitive peak off-state voltagesUT136E-5UT136E-6 UT136E-8 VDRM 500*600*800 V RMS on-state currentfull sine wave; Tmb 107 IT(RMS) 4 A Non-repetitive peak on-state current(Full sine wave; Tj = 25 prior to surge)t = 20mst = 16.7 ms...

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UTCUT136E: Specifications PARAMETER SYMBOL RATING UNIT Repetitive peak off-state voltagesUT136E-5UT136E-6 UT136E-8 VDRM 500*600*800 V RMS on-state currentfull sine wave; Tmb 107 IT(RMS) 4 A...

UTCUT136E Data Sheet

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Part Number:
UTCUT136E
Supply Ability:
5000

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Product Details

Description



Specifications

PARAMETER SYMBOL RATING UNIT
Repetitive peak off-state voltages
UT136E-5
UT136E-6
UT136E-8		 VDRM 500*
600*
800		 V
RMS on-state current
full sine wave; Tmb 107		 IT(RMS) 4 A
Non-repetitive peak on-state current
(Full sine wave; Tj = 25 prior to surge)
t = 20ms
t = 16.7 ms		 ITSM 25
27		 A
I2t for fusing
t = 10 ms		 I²t 3.1 A²S
Repetitive rate of rise of on-state current after triggering
ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/s
T2+ G+
T2+ GT2-
GT2-
G+		 dI/dt 50
50
50
10		 A/s
Peak gate voltage VGM 5 V
Peak gate current IGM 25 A
Peak gate power PGM   W
Average gate power (over any 20 ms period) PG(AV) 0.5 W
Storage temperature Tstg -40 ~ 150  
Operating junction temperature Tj 125  

*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/s.




Description

Passivated, sensitive gate triacs in a plastic envelope, UTCUT136E, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.




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