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UTCX3211

Features: * Provides bias for GaAs and HEMT FETs* Drives up to three FETs* Dynamic FET protection* Drain current set by external resistor* Polarisation switch for LNBs supporting zero volt gate switching topology.* 22kHz tone detection for band switchingApplication* Satellite receiver LNBs* Privat...

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SeekIC No. : 004539339 Detail

UTCX3211: Features: * Provides bias for GaAs and HEMT FETs* Drives up to three FETs* Dynamic FET protection* Drain current set by external resistor* Polarisation switch for LNBs supporting zero volt gate swit...

UTCX3211 Data Sheet

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Part Number:
UTCX3211
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

* Provides bias for GaAs and HEMT FETs
* Drives up to three FETs
* Dynamic FET protection
* Drain current set by external resistor
* Polarisation switch for LNBs supporting zero volt gate switching topology.
* 22kHz tone detection for band switching


Application

* Satellite receiver LNBs
* Private mobile radio (PMR)
* Cellular telephones


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Rating
 Units
Vcc
Supply Voltage
-0.6~12
V
ICC
Supply Current
100
mA
ID
Drain Current (per FET) (set by RCAL )
0~15
mA
VIN
Input Voltage (VPOL)
25 continuous
V
Topr
Operating Temperature
-40~70
°C
Tstg
Storage Temperature
-50~85
°C
PD
Power Disspation(Ta=25°C)
500
mW



Description

The UTCX3211 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.


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