V29C51000B

Features: 64Kx8-bit OrganizationAddress Access Time: 45, 70, 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation8KB Boot Block (lockable)512 bytes per Sector, 128 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Program Cycle Time: 20s (Max)Minimum 10,000 Erase-Program CyclesLow power di...

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SeekIC No. : 004539710 Detail

V29C51000B: Features: 64Kx8-bit OrganizationAddress Access Time: 45, 70, 90 nsSingle 5V± 10% Power SupplySector Erase Mode Operation8KB Boot Block (lockable)512 bytes per Sector, 128 Sectors Sector-Erase Cycle...

floor Price/Ceiling Price

Part Number:
V29C51000B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

 64Kx8-bit Organization
 Address Access Time: 45, 70, 90 ns
 Single 5V± 10% Power Supply
 Sector Erase Mode Operation
 8KB Boot Block (lockable)
 512 bytes per Sector, 128 Sectors
   Sector-Erase Cycle Time: 10ms (Max)
    Byte-Program Cycle Time: 20s (Max)
 Minimum 10,000 Erase-Program Cycles
 Low power dissipation
   Active Read Current: 20mA (Typ)
   Active Program Current: 30mA (Typ)
   Standby Current: 100A (Max)
 Hardware Data Protection
 Low VCC Program Inhibit Below 3.2V
 Self-timed program/erase operations with endof-cycle detection
    DATA Polling
   Toggle Bit
 CMOS and TTL Interface
 Available in two versions
   V29C51000T (Top Boot Block)
   V29C51000B (Bottom Boot Block)
 Packages:
   32-pin Plastic DIP
   32-pin TSOP-I
   32-pin PLCC



Pinout

  Connection Diagram


Specifications

Symbol

Parameter

Commercial

Unit

VIN

Input Voltage (input or I/O pins)

-2 to +7

V

VIN

Input Voltage (A9 pin, OE)

-2 to +13

V

VCC

Power Supply Voltage

-0.5 to +5.5

V

TSTG

Storage Temerpature (Plastic)

-65 to +125

°C

TOPR

Operating Temperature

0 to +70

°C

IOUT

Short Circuit Current(2)

200 (Max.)

mA




Description

The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.

The V29C51000T/V29C51000B offers a combination of features: Boot Block with Sector Erase Mode. The end of program/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6.

The V29C51000T/V29C51000B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Boot block architecture enables the device to boot from either the top (V29C51000T) or bottom (V29C51000B) sector. All inputs and outputs are CMOS and TTL compatible.

The V29C51000T/V29C51000B is ideal for applications that require updatable code and data storage.




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