V30120S

Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder Dip 260 , 40 seconds• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequ...

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SeekIC No. : 004539748 Detail

V30120S: Features: • Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder Dip 260 , 40 seconds&#...

floor Price/Ceiling Price

Part Number:
V30120S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/30

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Product Details

Description



Features:

• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 , 40 seconds
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Application

For use in high frequency inverters, switching power supplies, free-wheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER SYMBOL V30120S VI30120S UNIT
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current (see Fig. 1) IF(AV) 30 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 300 A
Peak repetitive reverse current per leg at tp = 2 s, 1 kHz IRRM 1.0 A
Voltage rate of change (rated VR) dv/dt 10000 V/s
Operating junction and storage temperature range TJ, TSTG - 20 to + 150





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