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V50100P

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 , 40 s• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor use in high frequency i...

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SeekIC No. : 004539908 Detail

V50100P: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Solder dip 260 , 40 s• ...

V50100P Data Sheet

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Part Number:
V50100P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER
SYMBOL
V40100P
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (Fig. 1) per device
per diode
IF(AV)
50
25
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
350
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150





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