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V8P10

Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C• Compone...

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SeekIC No. : 004540463 Detail

V8P10: Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky Technology• Low forward voltage drop, low power losses• High...

V8P10 Data Sheet

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Part Number:
V8P10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in low voltage high frequency inverters, freewheeling,dc-to-dc converters and polarity protection applications.




Specifications

PARAMETER
SYMBOL
V8P10
UNIT
Device marking code
V810
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (see Fig.1)
IF(AV)
8
A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy
at IAS = 2.0 A, L = 50 mH, Tj = 25 °C
EAS
100
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ,TSTG
-40 to + 150
°C





Description

V8P10 datasheet




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