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VB30100S

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip 260 , 40 s (for TO-220AB, ITO-...

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VB30100S: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...

VB30100S Data Sheet

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Part Number:
VB30100S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB, and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER SYMBOL
V30100S
VF30100S
VB30100S
VI30100S
 UNIT
Maximum repetitive peak reverse voltage VRRM
100
 V
Maximum average forward rectified current (Fig. 1) VF(AV)
30
 V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load		 IFSM
250
 A
Isolation voltage (ITO-220AC only)
from terminals to heatsink t = 1 min		 VAC
1500
 V
Operating junction and storage temperature range TJ, TSTJ
- 40 to + 150





Description

V30100S, VF30100S, VB30100S & VI30100S datasheet




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