VB30200C

Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip 260, 40 s (for TO-220AB and TO-...

product image

VB30200C Picture
SeekIC No. : 004540610 Detail

VB30200C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...

floor Price/Ceiling Price

Part Number:
VB30200C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260, 40 s (for TO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC





Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.






Specifications

PARAMETER
SYMBOL
V30200C
VB30200C
VI30200C
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
V
Maximum average forward rectified current (Fig. 1)
per device
per diode
IF(AV)
30
15
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25
EAS
100
mJ
Peak repetitive reverse current at tp = 2 s, 1 kHz per diode
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ,TSTG
- 40 to + 150





Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - Board Mount
Memory Cards, Modules
Potentiometers, Variable Resistors
Test Equipment
Cable Assemblies
Integrated Circuits (ICs)
View more