VBT760

The VBT760 is designed as one kind of trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

VBT760 has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Meets MSL level 1, per J-STD-020, LF maximum peak of 245°C (for TO-263AB package). (5)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package). (6)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. Those are all the main features.

Some absolute maximum ratings of VBT760 have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 60V. (2)Its maximum average forward rectified current would be 7.5A. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 100A. (4)Its non-repetitive avalanche energy at Tj=25°C, L=60mH would be 65mJ. (5)Its peak repetitive reverse current at tp=2us, 1kHz, Tj=38°C per diode would be 1.0A. (6)Its isolation voltage would be 1500V. (7)Its operating temperature and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VBT760 are concluded as follow. (1)Its breakdown voltage would be typ 60V. (2)Its instantaneous forward voltage per diode would be typ 0.58V at If=5A, and would be typ 0.67V and max 0.80V at If=7.5A. (3)Its reverse current would be max 700uA at Ta=25°C, Vr=60V and would be typ 6.6mA and max 25mA at Ta=125°C, Vr=60V. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of VBT760 please contact us for details. Thank you!