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VEC2603

Features: • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.• Best suited for load switches.• 1.8V drive.• 0.75mm mount highPinoutSpecifications Absolute max...

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VEC2603: Features: • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.• Best suited for load...

VEC2603 Data Sheet

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Part Number:
VEC2603
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting.
• Best suited for load switches.
• 1.8V drive.
• 0.75mm mount high




Pinout






Specifications

Absolute maximum ratings
(Pch) VDSS [V] 12
(Pch) VGSS [V] 8
(Pch) ID [A] 4
(Pch) PD [W] 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
(Nch) VDSS [V] 30
(Nch) VGSS [V] 10
(Nch) ID [A] 0.15
(Nch) PD [W] 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
Electrical characteristics
(Pch) VGS(off) min to max [V] 0.3 to 1.0
(Pch) |yfs| typ [S] 7.6
(Pch) RDS(on)1 typ [] 0.057
(Pch) RDS(on)1 max [] 0.08
(Pch) VGS [V] 2.5
(Pch) ID [A] 1
(Pch) RDS(on)2 typ [] 0.078
(Pch) RDS(on)2 max [] 0.112
(Pch) VGS [V] 1.8
(Pch) ID [A] 0.3
(Pch) Ciss [pF] 940
(Pch) Qg [nC] 11
(Nch) VGS(off) min to max [V] 0.4 to 1.3
(Nch) |yfs| typ [S] 0.22
(Nch) RDS(on)1 typ [] 3.7
(Nch) RDS(on)1 max [] 5.2
(Nch) VGS [V] 2.5
(Nch) ID [A] 0.04
(Nch) RDS(on)2 typ [] 6.4
(Nch) RDS(on)2 max [] 12.8
(Nch) VGS [V] 1.5
(Nch) ID [A] 0.01
(Nch) Ciss [pF] 7
(Nch) Qg [nC] 1.58


Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage VDSS
 30 -12 V
Gate-to-Source Voltage VGSS ±10 ±8 V
Drain Current (DC) ID 0.15 -4 A
Drain Current (Pulse) IDP PW10s, duty cycle1% 0.6 -16 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 0.9 W
Channel Temperature Tch 150 150
Storage Temperature Tstg -55to+150 -55to+150





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