VEC2811

Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-resistance.• 4V drive.• [SBD]• Short reverse recovery time.• Low...

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VEC2811 Picture
SeekIC No. : 004541093 Detail

VEC2811: Features: • DC/DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.• [MOSFET]...

floor Price/Ceiling Price

Part Number:
VEC2811
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• DC/DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 4V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.





Pinout






Specifications

Absolute maximum ratings
VDSS [V] 30
ID [A] 3
PD [W] 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
VRRM [V] 30
IO [A] 2
Electrical characteristics
VGS(off) min to max [V] 1.0 to 2.4
|yfs| typ [S] 3.4
RDS(on)1 typ [] 0.065
RDS(on)1 max [] 0.086
VGS [V] 10
ID [A] 1.5
RDS(on)2 typ [] 0.117
RDS(on)2 max [] 0.168
VGS [V] 4
ID [A] 0.7
Ciss [pF] 510
VF max [V] 0.45
IF [A] 2
IR [µA] 1250
VR [V] 15
IF=IR [mA] 100
Operation frequency [kHz] 650


Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
-30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--3
A
Drain Current (Pulse)
IDP
PW10ms, duty cycle1%
--12
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2*0.8mm) 1unit
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to +125
°C
[SBD]
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
2
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
5
A
Junction Temperature
Tj
-55 to +125
°C
Storage Temperature
Tstg
-55 to +125
°C





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