Features: • DC / DC converter.• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-resistance.• 1.8V drive.• [SBD]• Short reverse recovery time.•...
VEC2813: Features: • DC / DC converter.• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.• [MOSFET]...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
| Absolute maximum ratings | |
|---|---|
| VDSS [V] | 20 |
| ID [A] | 3 |
| PD [W] | 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
| VRRM [V] | 30 |
| IO [A] | 2 |
| Electrical characteristics | |
|---|---|
| VGS(off) min to max [V] | 0.4 to 1.3 |
| |yfs| typ [S] | 5 |
| RDS(on)1 typ [] | 0.061 |
| RDS(on)1 max [] | 0.085 |
| VGS [V] | 2.5 |
| ID [A] | 0.7 |
| RDS(on)2 typ [] | 0.075 |
| RDS(on)2 max [] | 0.113 |
| VGS [V] | 1.8 |
| ID [A] | 0.3 |
| Ciss [pF] | 280 |
| VF max [V] | 0.45 |
| IF [A] | 2 |
| IR [µA] | 1250 |
| VR [V] | 15 |
| trr max [ns] | 20 |
| IF=IR [mA] | 100 |
| Operation frequency [kHz] | 600 |
| Parameter | Symbol | Conditions | Ratings | Unit |
| [MOSFET] | ||||
| Drain-to-Source Voltage | VDSS | 20 | V | |
| Gate-to-Source Voltage | VGSS | ±10 | V | |
| Drain Current (DC) | ID | 3 | A | |
| Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | 12 | A |
| Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm250.8mm) 1unit | 0.8 | W |
| Channel Temperature | Tch | 150 | ||
| Storage Temperature | Tstg | -55 to +125 | ||
| [SBD] | ||||
| Repetitive Peak Reverse Voltage | VRRM | 30 | V | |
| Nonrepetitive Peak Reverse Surge Voltage | VRSM | 30 | V | |
| Average Output Current | IO | 2 | A | |
| Surge Forward Current | IFSM | 50Hz sine wave, 1 cycle | 10 | A |
| Junction Temperature | Tj | -55 to +125 | ||
| Storage Temperature | Tstg | -55 to +125 | ||