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VEC2814

Features: • DC / DC converter.• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.• [MOSFET]• 1.8V drive.• [SBD]• Short reverse recovery time.• Low forward voltage.Pino...

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VEC2814: Features: • DC / DC converter.• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.• [MOSFET]...

VEC2814 Data Sheet

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Part Number:
VEC2814
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
• [MOSFET]
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.






Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 3 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% 12 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm250.8mm) 1unit 0.8 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO 1 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A
Junction Temperature Tj -55 to +125
Storage Temperature Tstg -55 to +125


Absolute maximum ratings
VDSS [V] 20
ID [A] 3
PD [W] 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
VRRM [V] 30
IO [A] 1
Electrical characteristics
VGS(off) min to max [V] 0.4 to 1.3
|yfs| typ [S] 5
RDS(on)1 typ [] 0.061
RDS(on)1 max [] 0.085
VGS [V] 2.5
ID [A] 0.7
RDS(on)2 typ [] 0.075
RDS(on)2 max [] 0.113
VGS [V] 1.8
ID [A] 0.3
Ciss [pF] 280
VF max [V] 0.45
IF [A] 1
IR [µA] 360
VR [V] 15
trr max [ns] 10
IF=IR [mA] 100





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