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VEC2820

Features: • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-resistance.• 1.8V drive.• [SBD]• Short reverse recovery time.• Low forward v...

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SeekIC No. : 004541100 Detail

VEC2820: Features: • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.• [MOSFET]• Low ON-...

VEC2820 Data Sheet

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Part Number:
VEC2820
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 1.8V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.






Pinout






Specifications

Parameter Symbol Conditions Rating Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Collector current (DC) ID 3 A
Drain Current (Pulse) IDP PW10s, duty cycle1% 12 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm2*0.8mm) 1unit 0.9 W
Channel Temperature Tch 150
Storage temperature Tstg -55 to +125


Absolute maximum ratings
VDSS [V] 20
VGSS [V] 10
ID [A] 3
PD [W] 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
Electrical characteristics
RDS(on) typ []
VGS=4V		 0.051
RDS(on) typ []
VGS=2.5V
ID [A]=1		 0.061
RDS(on) typ []
VGS=1.8V
ID [A]=0.5		 0.075
VGS(off) min [V] 0.4
VGS(off) max [V] 1.3
|yfs| typ [S] 4.8
Ciss typ [pF] 280
Qg typ [nC] 8.8





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