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VEC2822

Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one packagefacilitating high-density mounting.[MOSFET]• Low ON-resistance• Ultrahigh-speed switching.• 1.8V drive.[SBD]• Low switching noise...

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SeekIC No. : 004541101 Detail

VEC2822: Features: • DC / DC converter.• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one packagefacilitating high-density mounting.[MOSFET]• Lo...

VEC2822 Data Sheet

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Part Number:
VEC2822
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Low switching noise.
• Low leakage current and high reliability due to planar structure.




Pinout






Specifications

Absolute maximum ratings
VDSS [V] 20
ID [A] 3.5
PD [W] 1
When mounted on ceramic substrate (1200mm²*0.8mm) 1unit
VRRM [V] 15
IO [A] 2
Electrical characteristics
VGS(off) min to max [V] 0.4 to 1.4
|yfs| typ [S] 5.8
RDS(on)1 typ [] 0.077
RDS(on)1 max [] 0.108
VGS [V] 2.5
ID [A] 1
RDS(on)2 typ [] 0.112
RDS(on)2 max [] 0.168
VGS [V] 1.8
ID [A] 0.3
Ciss [pF] 680
VF max [V] 0.56
IF [A] 2
IR [µA] 30
VR [V] 7.5
trr max [ns] 10
IF=IR [mA] 100


Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID -3.5 A
Drain Current (Pulse) IDP PW10µs, duty cycle1% -14 A
Allowable Power Dissipation PD Mounted on a ceramic board (1200mm2*0.8mm) 1unit 1.0 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +125
[SBD]
Repetitive Peak Reverse Voltage VRRM 15 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 17 V





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