Features: • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.• Ultrasmall package permitting applied sets to be made small and slim.Pinout Specifications Absolute maximum ratings VCBO [V] 100 VCEO [V]...
VEC2901: Features: • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.• Ultrasmall package permitting applied sets to be made sma...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.03 - .08 / Piece
Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 100 |
| VCEO [V] | 50 |
| IC [A] | 5 |
| PC [W] | 1.1
When mounted on ceramic substrate (900mm²*0.8mm) |
| VDSS [V] | 30 |
| VGSS [V] | 10 |
| ID [A] | 0.15 |
| PD [W] | 0.25 |
| Electrical characteristics | |
|---|---|
| hFE min | 250 |
| hFE max | 400 |
| VCE [V] | 2 |
| IC [mA] | 500 |
| Cob typ [pF] | 26 |
| VCE(sat) typ [V] | 0.075 |
| VCE(sat) max [V] | 0.15 |
| IC [A] | 2 |
| IB [mA] | 40 |
| VGS(off) min to max [V] | 0.4 to 1.3 |
| |yfs| typ [S] | 0.22 |
| RDS(on)1 typ [] | 2.9 |
| RDS(on)1 max [] | 3.7 |
| VGS [V] | 4 |
| ID [A] | 0.08 |
| RDS(on)2 typ [] | 3.7 |
| RDS(on)2 max [] | 5.2 |
| VGS [V] | 2.5 |
| ID [A] | 0.04 |
| Ciss typ [pF] | 7 |
| Qg typ [nC] | 1.58 |
| Parameter | Symbol | Conditions | Ratings | Unit |
| [TR] | ||||
| Collector-to-Base Voltage | VCBO | 100 | V | |
| Collector-to-Emitter Voltage | VCEO | 50 | V | |
| Emitter-to-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 5 | A | |
| Collector Current (Pulse) | ICP | 8 | A | |
| Collector Dissipation | PC |
Mounted on a ceramic board (900mm2*0.8mm) 1unit |
1.1 | W |
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature | Tstg | --55 to +150 | ||
| [FET] | ||||
| Drain-to-Source Voltage | VDSS | 30 | V | |
| Gate-to-Source Voltage | VGSS | ±10 | V | |
| Drain Current | ID | 150 | mA | |
| Drain Current (Pulse) | IDP |
PW10s, duty cycle1% |
600 | mA |
| Allowable Power Dissipation | PD | 0.25 | W | |
| Channel Temperature |
Tch |
150 |
||
| Storage Temperature | Tstg | --55 to +150 | ||