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VESD05C-FC1

Features: • ESD protection to IEC 61000-4-2 30 kV (air)• ESD protection to IEC 61000-4-2 8 kV (contact)• ESD protection to IEC 61000-4-5 (lightning): 8/20 µs, IPPM = 10 mA• 120 W peak pulse power dissipation per line (8/20 µs)• Suitable for high frequency ...

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SeekIC No. : 004541164 Detail

VESD05C-FC1: Features: • ESD protection to IEC 61000-4-2 30 kV (air)• ESD protection to IEC 61000-4-2 8 kV (contact)• ESD protection to IEC 61000-4-5 (lightning): 8/20 µs, IPPM = 10 mA...

VESD05C-FC1 Data Sheet

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Part Number:
VESD05C-FC1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• ESD protection to IEC 61000-4-2 30 kV (air)
• ESD protection to IEC 61000-4-2 8 kV (contact)
• ESD protection to IEC 61000-4-5 (lightning): 8/20 µs, IPPM = 10 mA
• 120 W peak pulse power dissipation per line (8/20 µs)
• Suitable for high frequency applications (low capacitance, low parasitic inductance)
• Low clamping voltage
• Minimum PCB space needed (0.5 mm2),< 0.55 mm height, only 0.47 mg/pcs
• No need for underfill material and/or additional solder
• Can be assembled using standard SMT pick & place equipment, reflow processes per J-STD-020 and assembly methods
• Green product


Application

Cellular phones Personal digital assistants (PDA), notebook computers MP3 players GPS Digital cameras Bluetooth Audio amplifiers DVD Power management systems Read write heads for hard drives Modules for watches CPU Digital TV's and sattelites receivers SMART cards




Specifications

Parameter Test condition Symbol Value Unit
Peak pulse power dissipation1) 8/20 µs pulse PPPM 120 W
Peak pulse current 8/20 µs pulse IPPM 10 A
ESD Air discharge per
IEC 61000-4-2		   VESD >30 KV
ESD Contact discharge per
IEC 61000-4-2		   VESD >8 KV
Soldering temperature   Tsd 260
Soldering time   t 10 s
1) Non-repetitive current pulse


Description

VESD05C-FC1 Flip Chip is a chip with all packaging and interconnections manufactured on the wafer prior to dicing. The interconnections are made of solder bumps on i/o
pads.Our VESD05C-FC1 device utilizes a silicon P/N junction for excellent clamping (protection) performance with low leakage current characteristic.




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