VF40120C Selling Leads, Price trend, VF40120C DataSheet download, circuit diagram from SeekIC.com

Features: • Trench MOS Schottky technology • Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA packag...

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SeekIC No. : 004541221 Detail

VF40120C: Features: • Trench MOS Schottky technology • Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °...

VF40120C Data Sheet

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Part Number:: VF40120C
Supply Ability:: 5000

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Upload time: 2024/4/24

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Product Details

Description

Features:

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Application

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

Specifications

PARAMETER	SYMBOL	V40120C	VF40120C	VB40120C	VI40120C	UNIT
Maximum repetitive peak reverse voltage	V_RRM	120				V
Maximum average forward rectified current (Fig. 1)per device per diode	I_F(AV)	40 20				A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load	I_FSM	250				A
Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min	V_AC	1500				V
Operating junction and storage temperature range	T_J, T_STG	- 40 to + 150

Description

V40120C, VF40120C, VB40120C & VI40120C datasheet

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VF40120C

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