VFT3080C

The VFT3080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

It has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Solder bath temperature 275°C max. 10s, per JESD 22-B106. (5)Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (6)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 80V. (2)Its maximum average forward rectified current would be 30A per device and would be 15A per diode. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 150A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its isolation voltage from termal to heatsink t=1 min would be 1500V. (6)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its instantaneous forward per diode would be typ 0.52V at If=5A, Ta=25°C and would be typ 0.75V and max 0.82V at If=15A, Ta=25°C and would be typ 0.46V at If=5A, Ta=125°C and would be typ 0.65V and max 0.70V at If=15A, Ta=125°C. (2)Its reverse current per diode would be typ 30uA and max 700uA at Vr=80V, Ta=25°C and would be typ 20mA and max 35mA at Vr=80V, Ta=125°C. (3)Its typical thermal resistance would be typ 6.0°C/W per diode and would be 5.0°C/W. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!