Features: • Single 3.3V +/- 0.3V power supply• Clock frequency:166MHz, 143MHz, 125MHz• Fully synchronous with all signals referenced to a positive clock edge• ProgrammableCAS Iatency (2,3)• Programmable burst length (1,2,4,8,& Full page)• Programmable wrap s...
VG3617161ET: Features: • Single 3.3V +/- 0.3V power supply• Clock frequency:166MHz, 143MHz, 125MHz• Fully synchronous with all signals referenced to a positive clock edge• ProgrammableCAS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe VG3617161BT is fabricated with an advanced submicron CMOS technology and designed t...
Features: • Single 3.3V +/- 0.3V power supply• Clock Frequency: 180MHz, 166MHz, 143MHz...
Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time -7H: 133MHz...

| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss |
VIN,VOUT | -1.0 to +4.6 | V |
| Supply voltage relative to Vss | VDD,VDDQ | -1.0 to +4.6 | V |
| Short circuit output current | IOUT | 50 | mA |
| Power dissipation | PD | 1.0 | W |
| Operating temperature | TOPT | 0 to + 70 | |
| Storage temperature | TSTG | -55 to + 125 |
The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. VG3617161ET is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-speed application.Programmable CAS Latency and Burst Length make it possible to be used in widely various domains. VG3617161ET is packaged by using JEDEC standard pinouts and standard plastic 50-pin TSOP II.