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Part Number: VG36256801A
Description: The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank,8,388,60...


Description: The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank,8,388,60...
The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank,8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-of-the-art technology to meet standard PC100 or high speed PC133 requirement. Four internal independent banks greatly increase the performance efficiency. It is packaged in JEDEC standard pinout and standard plastic 54-pin TSOP package.
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss |
VIN,VOUT | -0.5 to + 4.6 | V |
| Supply voltage relative to Vss | VDD,VDDQ | -0.5 to + 4.6 | V |
| Short circuit output current | IOUT | 50 | mA |
| Power dissipation | PD | 1.0 | W |
| Operating temperature | TOPT | 0 to + 70 | · |
| Storage temperature | TSTG | -55 to + 125 | · |
VG36256801A
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