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Part Number: VG3664321(4)1(2)BT
Description: The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -bank, and 1,048...


Description: The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -bank, and 1,048...
The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
| Parameter | Symbol | Value | Unit |
| Voltage on any pin relative to Vss |
VIN,VOUT | -0.5 to + 4.6 | V |
| Supply voltage relative to Vss | VDD,VDDQ | -0.5 to + 4.6 | V |
| Short circuit output current | IOUT | 50 | mA |
| Power dissipation | PD | 1.0 | W |
| Operating temperature | TOPT | 0 to + 70 | |
| Storage temperature | TSTG | -55 to + 125 |
VG36128161A
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