Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 8/10 for LVTTL• High speed clock cycle time : 8/10 for SSTL - 3• Fully synchronous with all signals referenced to a positive clock edge• ProgrammableCAS Iatency (2,3)• Programmable burs...
VG3664321(4)1(2)BT: Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 8/10 for LVTTL• High speed clock cycle time : 8/10 for SSTL - 3• Fully synchronous with all signa...
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Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 7.5ns/10n...
Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time -7H: 133MHz...
Features: • Single 3.3V (±0.3V ) power supply• High speed clock cycle time : 7.5ns/10n...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss |
VIN,VOUT | -0.5 to + 4.6 | V |
Supply voltage relative to Vss | VDD,VDDQ | -0.5 to + 4.6 | V |
Short circuit output current | IOUT | 50 | mA |
Power dissipation | PD | 1.0 | W |
Operating temperature | TOPT | 0 to + 70 | |
Storage temperature | TSTG | -55 to + 125 |
The VG3664321(4)1(2)BT is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. VG3664321(4)1(2)BT is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.