VM6110

Features: SpecificationsDescriptionThe VM6110 has the following features including High Performance:Read Gain:TF=300 V/V,MR=350 V/V,MR Current Range=6-20 mA,Write Current Range=10-60 mAp-p.Head Inductance Range=400 nH-1 H,Rise Time=7 ns maximum;Operates on ±5 VoR Power Supplies;Fault Detection Cap...

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SeekIC No. : 004542237 Detail

VM6110: Features: SpecificationsDescriptionThe VM6110 has the following features including High Performance:Read Gain:TF=300 V/V,MR=350 V/V,MR Current Range=6-20 mA,Write Current Range=10-60 mAp-p.Head Indu...

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Part Number:
VM6110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:






Specifications






Description

The VM6110 has the following features including High Performance:Read Gain:TF=300 V/V,MR=350 V/V,MR Current Range=6-20 mA,Write Current Range=10-60 mAp-p.Head Inductance Range=400 nH-1 H,Rise Time=7 ns maximum;Operates on ±5 VoR Power Supplies;Fault Detection Capability;Designed for use with Four-Terminal MR Heads;MR Element Resistance of 10-25.

The VM6110 is a high-performance read/write preamplifier designed for use with four-terminal magneto-resistive recording heads. The VM6110 consists of a thin-film head writer, a thin-film head reader and a magneto-resistive reader. This device supplies write current switching to the thin-film head reads back the signal from the thin-film head and provides sense current to the MR element.The VM6110 operates from +5V and -5V power supplies and is available as a 4-channel device. The VM6110 is available in a variety of package options. Please consult VTC for details.In the write mode, the circuit operates as a thin-film head write current switch, driving the thin-film write element of the MR head. The magnitude of the write current is externally programmed either by a resistor or a current source. The writer has a current gain of 20mA/mA.In the read mode, the circuit operates as a low-noise differential amplifier which senses resistance changes in the MR element which corresponds to flux changes on the disk. The amplitude of the sense current is set by either an external resistor or a current source. The circuit also operates as a thin-film head reader to read signals from the thin-film part of the MR head.In the idle mode, the read and write current generators and the associated bias circuitry is turned off to reduce power dissipation.

The VM6110 products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).






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