VMK165-007T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 70 V
Resistance Drain-Source RDS (on) : 0.007 Ohms
Mounting Style : Screw
Continuous Drain Current : 165 A
Configuration : Dual Common Triple Source
Package / Case : TO-240AA


Features:

• Two MOSFET with common source
• International standard package JEDEC TO-240 AA
• Direct copper bonded Al₂O₃ ceramic base plate
• Isolation voltage 3000 V~
• Low R_DS(on) HDMOS^TM process
• Low package inductance for high speed switching
• Kelvin source contact
• Keyed twin plugs


Application

• Push-pull inverters
• Switched-mode and resonant-mode power supplies
• Uninterruptible power supplies (UPS)
• AC static switches


Parameters:

Technical/Catalog Information	VMK165-007T
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	70V
Current - Continuous Drain (Id) @ 25° C	165A
Rds On (Max) @ Id, Vgs	7 mOhm @ 82.5A, 10V
Input Capacitance (Ciss) @ Vds	8.8nF @ 25V
Power - Max	390W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	480nC @ 10V
Package / Case	TO-240AA
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VMK165 007T VMK165007T