VMM650-01F

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Resistance Drain-Source RDS (on) : 2.2 mOhms
Mounting Style : Screw
Continuous Drain Current : 680 A
Configuration : Dual Common Drain Source
Package / Case : Y3-Li-6


Features:

• HiPerFET^TM technology
low R_DSon
unclamped inductive switching (UIS) capability
dv/dt ruggedness
fast intrinsic reverse diode
low gate charge
• thermistor for internal temperature measurement
• package
low inductive current path
screw connection to high current main terminals
use of non interchangeable connectors for auxiliary terminals possible
Kelvin source terminals for easy drive
isolated DCB ceramic base plate


Application

• converters with high power density for
main and auxiliary AC drives of electric vehicles
4 quadrant DC drives
power supplies


Parameters:

Technical/Catalog Information	VMM650-01F
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	680A
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 500A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Bulk
Gate Charge (Qg) @ Vgs	-
Package / Case	Y3-Li
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VMM650 01F VMM65001F