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VMO650-01F: MOSFET 650 Amps 100V

VMO650-01F Data Sheet

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Part Number:: VMO650-01F
Mfg:: Ixys
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	690 A
Resistance Drain-Source RDS (on) :	0.0018 Ohms	Configuration :	Single Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Screw
Package / Case :	Y3-DCB	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.0018 Ohms
Mounting Style : Screw
Package / Case : Y3-DCB
Continuous Drain Current : 690 A

Parameters:

Technical/Catalog Information	VMO650-01F
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	690A
Rds On (Max) @ Id, Vgs	1.8 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	59000pF @ 25V
Power - Max	2500W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	2300nC @ 10V
Package / Case	Y3-DCB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VMO650 01F VMO65001F

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VMO650-01F

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