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VMO650-01F

MOSFET 650 Amps 100V

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SeekIC No. : 00164460 Detail

VMO650-01F: MOSFET 650 Amps 100V

VMO650-01F Data Sheet

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Part Number:
VMO650-01F
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 690 A
Resistance Drain-Source RDS (on) : 0.0018 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : Screw
Package / Case : Y3-DCB Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.0018 Ohms
Mounting Style : Screw
Package / Case : Y3-DCB
Continuous Drain Current : 690 A


Parameters:

Technical/Catalog InformationVMO650-01F
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C690A
Rds On (Max) @ Id, Vgs1.8 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 59000pF @ 25V
Power - Max2500W
PackagingBulk
Gate Charge (Qg) @ Vgs2300nC @ 10V
Package / CaseY3-DCB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VMO650 01F
VMO65001F



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