VN0204N6

The VN0204N6 belongs to VN02A family. These enhancement-made (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coetitcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- tnduced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range ot switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and tast switching speeds are desired. The VN0204N6 can applicated in (1)motor control; (2)converters; (3)amplifiers; (4)switches; (5)power supply circuits; (6)drivers (relays, hammers, solenolds, lamps, memories, displays, bipolar transistors, etc.).

The features of VN0204N6 can be summarized as (1)freedom from secondary breakdown; (2)low power drive requirement; (3)4 independent channels; (4)low CISS and fast switching speeds; (5)4 electrical and military versions available; (6)high input impedance and high gain.

The thermal characteristic (plastic DIP/ceramic DIP) of VN0204N6 are (1)ID continuous&IDR(single dir): 0.86A/1.0A; (2)ID pusled+& IDRM+: 4.0A/4.0A; (3)power dissipation @ TC=25°C: 3W/4W; (4)ja(°C/W):83.3/62.5; (5)jc(°C/W):41.6/31.2.