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VN02ANSP

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 7 A IR Reverse Output Current -7 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT Sta...

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VN02ANSP: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 7 A IR Reverse Output Current -7 ...

VN02ANSP Data Sheet

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Part Number:
VN02ANSP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

 7 A

IR

 Reverse Output Current

-7

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current (sink)

 ±10 mA
VESD

Electrostatic Discharge (C=100pF,R=1.5K; )

 2000 V

Ptot

Power Dissipation at TC25°C

31

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN02ANSP is a monolithic device made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from over temperature and short circuit. The VN02ANSP diagnostic output indicates an over temperature status.Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off.




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