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VN02NPT

Specifications Symbol Parameter Value Unit PowerSO-10 PPAK V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 6 A IR Reverse Output Current -6 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4...

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VN02NPT: Specifications Symbol Parameter Value Unit PowerSO-10 PPAK V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 6 A IR Reverse ...

VN02NPT Data Sheet

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Part Number:
VN02NPT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

 PowerSO-10

 PPAK 

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

 6 A

IR

 Reverse Output Current

-6

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current

 ±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

 2000 V

Ptot

Power Dissipation at TC25°C

58

 46

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN02NSP/VN02NPT are monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from over temperature and short circuit.The input control of VN02NSP/VN02NPT  is 5V logic level compatible.




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