VN0300M

The VN0300M is designed as N-channel enhancement-mode MOS transistors.

Some absolute maximum ratings of VN0300M have been concluded into several points as follow. The first one is about its drain to source voltage which would be 30V. The second one is about its gate to source voltage which would be ±30V. The third one is about its continuous drain current which would be 0.67A at Ta=25°C and would be 0.43A at Ta=100°C. The fourth one is about its pulsed drain current which would be 3A. The fifth one is about its power dissipation which would be 1W at Ta=25°C and would be 0.4W at Ta=100°C. The sixth one is about its operating junction & storage temperature range which would be from -55°C to +150°C. The seventh one is about its lead temperature which would be 300°C. The eighth one is about its junction to ambient which would e 125K/W.

And some specifications about VN0300M. The first one is about its drain to source breakdown voltage which would be min 30V and typ 65V. The second one is about its gate-threshold voltage which would be min 0.8V and typ 1.5V and max 2.5V. The third one is about its gate body leakage which would be max ±100nA. The fourth one is about its zero gate voltage drain current which would be max 10uA and would be max 500uA at Tj=125°C. The fifth one is about its on-state drain current which would be min 1A and typ 3A. The sixth one is about its drain to source on-resistance which would be typ 1.4 and max 3.3 at Id=0.3A and would be typ 0.85 and max 1.2 at Id=1A. The seventh one is about its forward transconductance which would be min 200ms and typ 500ms. The eighth one is about its common source output conductance which would be typ 1500us. And so on. For more information of VN0300M please contact us.